Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications

Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications

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In this paper, we have investigated the flicker noise (1/ $f$ ) in 45-nm RFSOI NFETs for quantum computing applications.1/ $f$ noise characterization and analysis were performed in linear region at cryogenic temperatures down to 10K.A Lorentzian-like noise is also observed depending on bias conditions, possibly due to the floating body of PDSOI.The extracted frequency exponent $(gamma)$ shows an inverted iphone 14 price chicago U-shape behavior with temperature mainly attributed to non-uniform energy distribution of traps in the gate dielectric.

The dominant source of 1/ $f$ noise is copyright number fluctuation.Thermal-activation behavior of 1/ $f$ noise is studied, which shows the traps responsible for noise are not thermally activated.Volume trap densities are also extracted from 300K down to 10K.The volume trap density increases with a decrease in temperature, but no significant increase in normalized noise is observed at cryogenic temperatures in the measured lorenametaute.com NFETs.

The non-uniform distribution along with the thermal inactive behavior of traps over the studied temperature range is expected to be a plausible reason for the temperature-independent behavior of normalized noise.